发明名称 |
Nonvolatile memory device including select gate and memory gate |
摘要 |
A nonvolatile memory device includes a gate structure including a select gate formed over a substrate and a memory gate formed on one sidewall of the select gate and having a P-type channel, a drain region formed in the substrate at one sidewall of the gate structure and overlapping a part of the memory gate, and a source region formed in the substrate at the other sidewall of the gate structure and overlapping a part of the select gate. The memory gates include a grid of rows and columns with bits of 1's and 0's selectively forming a memory in a nonvolatile memory device. |
申请公布号 |
US9054175(B2) |
申请公布日期 |
2015.06.09 |
申请号 |
US201313954499 |
申请日期 |
2013.07.30 |
申请人 |
SK Hynix Inc. |
发明人 |
Park Sung-Kun |
分类号 |
H01L29/76;H01L29/78 |
主分类号 |
H01L29/76 |
代理机构 |
IP & T Group LLP |
代理人 |
IP & T Group LLP |
主权项 |
1. A nonvolatile memory device comprising:
a gate structure comprising a select gate formed over a substrate and a memory gate formed on one sidewall of the select gate; a drain region formed in the substrate at one sidewall of the gate structure and overlapping a part of the memory gate; a source region formed in the substrate at the other sidewall of the gate structure and overlapping a part of the select gate; and a contact structure formed over the gate structure and electrically merging the select gate and the memory gate. |
地址 |
Gyeonggi-do KR |