Strained InGaAs quantum wells for complementary transistors

摘要

An InGaAs n-channel quantum well heterostructure for use in a complementary transistor having a Sb-based p-channel. The heterostructure includes a buffer layer having a lattice constant intermediate that of the n- and p-channel materials and which is configured to accommodate the strain produced by a lattice-constant mismatch between the n-channel and p-channel materials.

主权项

1. An InGaAs n-channel quantum well heterostructure, comprising:
a substrate; a first buffer layer disposed on the substrate, the first buffer layer being lattice-matched to the substrate; a second buffer layer disposed on the first buffer layer; a barrier layer disposed on the second buffer layer an InxGa1−xAs, x=0.53 to 1, n-channel layer disposed on the second buffer layer, the InxGa1−xAs n-channel material having a first lattice constant; a barrier layer disposed on the n-channel layer; a spacer layer disposed on the barrier layer; and a second barrier layer disposed on the spacer layer; wherein the heterostructure is configured for use with an antimonide-based p-channel layer in a complementary transistor, the p-channel layer having a second lattice constant different from the first lattice constant, a difference between the first and second lattice constants producing a strain between the n-channel layer and the p-channel layer in the complementary transistor; wherein the second buffer layer serves as a buffer layer for both the n-channel layer and the p-channel layer in the complementary transistor; and wherein the second buffer layer is configured to have a third lattice constant intermediate the first and second lattice constants and is configured to accommodate the strain produced by a lattice-constant mismatch between the n-channel layer and the p-channel layer in the complementary transistor.