发明名称 |
Dicing tape-integrated film for semiconductor back surface, and process for producing semiconductor device |
摘要 |
The present invention relates to a dicing tape-integrated film for semiconductor back surface, which includes: a dicing tape including a base material layer, a first pressure-sensitive adhesive layer and a second pressure-sensitive adhesive layer stacked in this order, and a film for semiconductor back surface stacked on the second pressure-sensitive adhesive layer of the dicing tape, in which a peel strength Y between the first pressure-sensitive adhesive layer and the second pressure-sensitive adhesive layer is larger than a peel strength X between the second pressure-sensitive adhesive layer and the film for semiconductor back surface, and in which the peel strength X is from 0.01 to 0.2 N/20 mm, and the peel strength Y is from 0.2 to 10 N/20 mm. |
申请公布号 |
US9050773(B2) |
申请公布日期 |
2015.06.09 |
申请号 |
US201314052154 |
申请日期 |
2013.10.11 |
申请人 |
NITTO DENKO CORPORATION |
发明人 |
Asai Fumiteru;Shiga Goji;Takamoto Naohide |
分类号 |
B32B7/12;B32B27/00;B32B7/02;B32B27/08;B32B9/00;B32B33/00;B44C5/08;B32B7/06;C09J7/02;C09J201/00;H01L21/68;H01L21/683;H01L21/56;H01L23/00 |
主分类号 |
B32B7/12 |
代理机构 |
Sughrue Mion, PLLC |
代理人 |
Sughrue Mion, PLLC |
主权项 |
1. A dicing tape-integrated film for semiconductor back surface, comprising:
a dicing tape comprising a base material layer, a first pressure-sensitive adhesive layer and a second pressure-sensitive adhesive layer stacked in this order, and a film for semiconductor back surface stacked on the second pressure-sensitive adhesive layer of the dicing tape, wherein a peel strength Y between the first pressure-sensitive adhesive layer and the second pressure-sensitive adhesive layer is larger than a peel strength X between the second pressure-sensitive adhesive layer and the film for semiconductor back surface, wherein the peel strength X is from 0.01 to 0.2 N/20 mm, and the peel strength Y is from 0.2 to 10 N/20 mm, wherein a ratio (Y/X) of the peel strength Y to the peel strength X is from 3 to 500, and wherein the film for semiconductor back surface contains a colorant. |
地址 |
Osaka JP |