| 摘要 |
In reconfigurable electronic devices, an independent upper gate and a lower gate are embodied. The degree of integration can be greatly increased compared to existing reconfigurable electronic devices. Based on an independent lower electrode array having a nonvolatile memory function in a device, dynamic parasitic elements and the complexity of lines can be reduced in operating the reconfigurable circuit. Ultimately, power consumption can be reduced. Also, compared to the existing reconfigurable electronic device, the device has superior properties such as the functional variety of a multifunctional device, the arrangement margin of process, the capacity of forming electric doping in a channel, process compatibility between an upward method and a downward method, and the matching with 1D and 2D materials. |
