发明名称 METHOD OF FORMING A NANO STRUCTURE AND METHOD OF MANUFACTURING A NANO DEVICE USING THE SAME
摘要 <p>Provided is a method for forming a nanostructure, which comprises: forming a first sacrificial layer pattern extended across a substrate divided into the first and second regions; forming a second sacrificial layer pattern consisting of materials having etching selectivity with respect to the first sacrificial layer pattern in order to cover the second region on the substrate; forming a self-assembled nano thin film on the entire substrate including the first and second sacrificial layer patterns; and forming a nanopattern extended in a direction perpendicular to the side wall of the first sacrificial layer pattern by lifting-off the second sacrificial layer pattern from the substrate.</p>
申请公布号 KR101527317(B1) 申请公布日期 2015.06.09
申请号 KR20140010610 申请日期 2014.01.28
申请人 KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION 发明人 LEE, BYUNG YANG;JEON, TAE JIN;SOHN, JONG RYEUL;JIN, JOON HYUNG;PARK, MIN JUN
分类号 B82B3/00;B82B1/00 主分类号 B82B3/00
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