Plasma doping method and method for fabricating semiconductor device using the same

摘要

A doping method that forms a doped region at a desired location of a three-dimensional (3D) conductive structure, controls the doping depth and doping dose of the doped region relatively easily, has a shallow doping depth, and prevents a floating body effect. A semiconductor device is fabricated using the same doping method. The method includes, forming a conductive structure having a sidewall, exposing a portion of the sidewall of the conductive structure, and forming a doped region in the exposed portion of the sidewall by performing a plasma doping process.

主权项

1. A method for fabricating a semiconductor device, comprising:
forming an active region having a sidewall by etching a substrate; exposing a portion of the sidewall of the active region; forming a junction in the exposed portion of the sidewall by performing a plasma doping process; and forming a protective layer on a surface of the junction, wherein the exposing of the portion of the sidewall of the active region comprises:
forming a first anti-doping layer filling a portion of a gap between the active region and a second anti-doping layer covering a first sidewall of the active region; andforming an opening, which exposes a portion of a second sidewall of the active region by selectively removing a portion of the first anti-doping layer.