Semiconductor devices and methods of manufacturing the same

摘要

A semiconductor device includes a plurality of lower electrodes on a substrate, with each of the lower electrodes extending in a height direction from the substrate and including sidewalls, the lower electrodes being spaced apart from each other in a first direction and in a second direction, a plurality of first supporting layer patterns contacting the sidewalls of the lower electrodes, the first supporting layer patterns extending in the first direction between ones of the lower electrodes adjacent in the second direction, a plurality of second supporting layer patterns contacting the sidewalls of the lower electrodes, the second supporting layer pattern extending in the second direction between ones of the lower electrodes adjacent in the first direction, the plurality of second supporting layer patterns being spaced apart from the plurality of first supporting layer patterns in the height direction.

主权项

1. A semiconductor device, comprising:
a plurality of lower electrodes on a substrate, each of the lower electrodes extending in a height direction from the substrate and including sidewalls, the lower electrodes being spaced apart from each other in a first direction and in a second direction; a plurality of first supporting layer patterns extending in the first direction between ones of the lower electrodes that are adjacent to each other in the second direction, the first supporting layer patterns contacting the sidewalls of the ones of the lower electrodes that are adjacent to each other in the second direction; and a plurality of second supporting layer patterns extending in the second direction between ones of the lower electrodes that are adjacent to each other in the first direction, the second supporting layer pattern contacting the sidewalls of the ones of the lower electrodes that are adjacent to each other in the second direction, the plurality of second supporting layer patterns being spaced apart from the plurality of first supporting layer patterns in the height direction, each lower electrode including at least two different cross-sectional shapes, the cross-sectional shapes being taken in planes parallel to a top surface of the substrate or parallel to the height direction.