| 发明名称 | Method for the wafer-level integration of shape memory alloy wires | ||
| 摘要 | The present invention relates to a method to attach a shape memory alloy wire to a substrate, where the wire is mechanically attached into a 3D structure on the substrate. The present invention also relates to a device comprising a shape memory alloy wire attached to a substrate, where the wire is mechanically attached into a 3D structure on the substrate. | ||
| 申请公布号 | US9054224(B2) | 申请公布日期 | 2015.06.09 |
| 申请号 | US201113885257 | 申请日期 | 2011.11.22 |
| 申请人 | SENSEAIR AB | 发明人 | Braun Stefan;Niklaus Frank;Fischer Andreas;Gradin Henrik |
| 分类号 | H01L21/44;H01L23/52;H01L23/00;B23K20/00 | 主分类号 | H01L21/44 |
| 代理机构 | Drinker Biddle & Reath LLP | 代理人 | Drinker Biddle & Reath LLP |
| 主权项 | 1. A method of attaching a wire to a substrate, wherein said wire is mechanically attached into a 3D structure, being a part of said substrate, comprising at least one clamp structure and further comprising the steps of: fixating said wire either by generating frictional forces or anchoring between a portion of said wire and said 3D structure; and truncating said wire by applying a force. | ||
| 地址 | Delsbo SE | ||