Methods for forming contact landing regions in split-gate non-volatile memory (NVM) cell arrays

摘要

Methods and related structures are disclosed for forming contact landing regions in split-gate NVM (non-volatile memory) systems. A dummy select gate structure is formed while also forming select gates for split-gate NVM cells. A control gate layer is formed over the select gates and the dummy select gate structure, as well as an intervening charge storage layer. The control gate material will fill in gaps between the select gate material and the dummy select gate material. A non-patterned spacer etch is then used to etch the control gate layer to form a contact landing region associated with the dummy select gate structure while also forming spacer control gates for the split-gate NVM cells. The disclosed embodiments provide improved (e.g., more planar) contact landing regions without requiring additional processing steps and without increasing the pitch of the resulting NVM cell array.

主权项

1. A method for forming a contact landing region for a split-gate non-volatile memory (NVM) system, comprising:
forming select gate structures for split-gate non-volatile memory (NVM) cells within an array of split-gate NVM cells; forming a dummy select gate structure while forming the select gate structures; forming a charge storage layer for the split-gate NVM cells; forming a control gate layer over the select gate structures and the dummy select gate structure; and etching the control gate layer with a non-patterned spacer etch to form control gate structures associated with the split-gate NVM cells and to form a contact landing region between the select gate structures and the dummy select gate structure.