发明名称 Semiconductor structure and method for manufacturing the same
摘要 A semiconductor structure and a method for manufacturing the same are provided. A semiconductor structure includes a device substrate, a conductive film, a dielectric film and a conductive plug. The device substrate includes a semiconductor substrate and a conductive structure on an active surface of the semiconductor substrate. The device substrate has a substrate opening passing through the semiconductor substrate and exposing the conductive structure. The conductive film, the conductive plug and the dielectric film between the conductive film and the conductive plug are disposed in the substrate opening.
申请公布号 US9054106(B2) 申请公布日期 2015.06.09
申请号 US201314078653 申请日期 2013.11.13
申请人 UNITED MICROELECTRONICS CORP. 发明人 Kao Ching-Hung
分类号 H01L23/52;H01L27/14;H01L23/522;H01L27/146;H01L21/768 主分类号 H01L23/52
代理机构 WPAT, PC 代理人 WPAT, PC ;King Justin
主权项 1. A semiconductor structure, comprising: a semiconductor substrate comprising: a conductive structure on an active surface of the semiconductor substrate, wherein the semiconductor substrate has a substrate opening passing there through and exposing the conductive structure; a conductive film; a dielectric layer in the substrate opening and under the conductive film; a dielectric film; and a conductive plug, wherein the conductive film, the conductive plug and the dielectric film between the conductive film and the conductive plug are disposed in the substrate opening.
地址 Hsinchu TW