| 发明名称 |
Semiconductor device having through-substrate via with insulating portion |
| 摘要 |
A semiconductor device includes an isolation portion penetrating a semiconductor substrate from a first surface to a second surface positioned opposite the first surface. The isolation portion includes a first insulating film and a second insulating film. The first insulating film has a slit portion at a side of the first surface and the slit portion is buried with the second insulating film. The semiconductor device further includes an electrode penetrating the semiconductor substrate that is surrounded by the isolation portion. |
| 申请公布号 |
US9054081(B2) |
申请公布日期 |
2015.06.09 |
| 申请号 |
US201213560085 |
申请日期 |
2012.07.27 |
| 申请人 |
PS4 LUXCO S.A.R.L. |
发明人 |
Nakamura Nobuyuki;Muramoto Takuyuki;Tsukamoto Takeo |
| 分类号 |
H01L29/00;H01L23/48;H01L23/00;H01L21/768;H01L25/065 |
主分类号 |
H01L29/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a semiconductor substrate including a first surface and a second surface positioned opposite the first surface; a device element formed on the first surface of the semiconductor substrate; and an isolation portion penetrating the semiconductor substrate from the first surface to the second surface, the isolation portion comprising a first insulating film and a second insulating film, the first insulating film having a slit portion buried with the second insulating film, wherein the first insulating film has a seam that is formed by growing the first insulating film from both sides of the isolation portion, and the first insulating film divides in the slit portion on the seam at a side of the first surface. |
| 地址 |
Luxembourg LU |
