Etchstop layers and capacitors

摘要

Capacitor structures for integrated circuit devices are provided. Capacitors include proximate dense or highly dense etchstop layers. The dense or highly dense etchstop layer is, for example, a high-k material. Capacitors are, for example, metal-insulator-metal (MIM) capacitors and are useful in DRAM (dynamic random access memory) and eDRAM (embedded dynamic random access memory) structures.

主权项

1. A semiconductor device comprising,
a substrate having at least one dielectric layer disposed on the substrate surface, the dielectric layer having a first dielectric etchstop layer and a second etchstop layer disposed thereon, wherein the second etchstop layer has a density that is greater than the first etchstop layer and a density that is greater than 3 g/cm3, a well formed through the first and second etchstop layers and in the at least one dielectric layer, wherein the well comprises sidewalls and a bottom, and a first layer of conducting material is disposed on the sidewalls and bottom of the well, an insulating layer disposed on the first layer of conducting material, and a second layer of conducting material disposed on the first layer of conducting material.