发明名称 |
Semiconductor device |
摘要 |
A semiconductor device includes: a substrate; a lower wiring on the substrate; an inter-layer insulating film covering the lower wiring; first and second upper wirings on the inter-layer insulating film and separated from each other; and a semi-insulating protective film covering the first and second upper wirings, wherein the protective film is not provided in a region right above the lower wiring and between the first upper wiring and the second upper wiring. |
申请公布号 |
US9054039(B2) |
申请公布日期 |
2015.06.09 |
申请号 |
US201414447045 |
申请日期 |
2014.07.30 |
申请人 |
MITSUBISHI ELECTRIC CORPORATION |
发明人 |
Fujii Hidenori |
分类号 |
H01L23/52;H01L23/29;H01L23/31 |
主分类号 |
H01L23/52 |
代理机构 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
代理人 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
主权项 |
1. A semiconductor device comprising:
a substrate; first and second lower wirings on the substrate; an inter-layer insulating film covering the first and second lower wirings; first and second upper wirings on the inter-layer insulating film and separated from each other; a trench wiring on the substrate below a region between the first upper wiring and the second upper wiring and connecting the first lower wiring and the second lower wiring; and a semi-insulating protective film covering the first and second upper wirings. |
地址 |
Chiyoda-ku JP |