Silicon single crystal doped with gallium, indium, or aluminum

摘要

A doped silicon single crystal having a resistivity variation along a longitudinal and/or radial axis of less than 10% and a method of preparing one or a sequential series of doped silicon crystals is disclosed. The method includes providing a melt material comprising silicon into a continuous Czochralski crystal growth apparatus, delivering a dopant, such as gallium, indium, or aluminum, to the melt material, providing a seed crystal into the melt material when the melt material is in molten form, and growing a doped silicon single crystal by withdrawing the seed crystal from the melt material. Additional melt material is provided to the apparatus during the growing step. A doping model for calculating the amount of dopant to be delivered into the melt material during one or more doping events, methods for delivering the dopant, and vessels and containers used to deliver the dopant are also disclosed.

主权项

1. A method of preparing at least one doped silicon single crystal comprising the steps of:
a) providing a melt material comprising silicon into a continuous Czochralski crystal growth apparatus; b) delivering a dopant to said melt material, wherein the dopant is gallium, indium, or aluminum; c) providing a seed crystal into said melt material, wherein said melt material is in molten form; and d) growing a doped silicon single crystal by withdrawing said seed crystal from said melt material, wherein additional melt material is provided to the crystal growth apparatus during the growing step, wherein a model is employed to predict dopant concentration within the melt material in an inner growth chamber of the crystal growth apparatus, wherein said model predicts an amount of evaporation of said dopant from the melt material over time.