| 发明名称 | Treatment method of a getter material and encapsulation method of such getter material | ||
| 摘要 | A treatment method for a getter material is provided, including forming a protective layer on the thin layer getter material by performing at least one oxidation and/or nitriding step of the thin layer getter material conducted under dry atmosphere of dioxygen and/or dinitrogen, wherein the protective layer is composed of oxide and/or nitride of the thin layer getter material, and wherein a thickness of the protective layer is between approximately 1 nm and 10 nm. | ||
| 申请公布号 | US9051173(B2) | 申请公布日期 | 2015.06.09 |
| 申请号 | US201012898094 | 申请日期 | 2010.10.05 |
| 申请人 | Commissariat à l'énergie atomique et aux énergies alternatives | 发明人 | Baillin Xavier;Lagoutte Emmanuelle;Rodriguez Guillaume |
| 分类号 | H05K5/00;B05D5/12;B81C1/00;H01J29/94;H01L23/10;H01L23/26 | 主分类号 | H05K5/00 |
| 代理机构 | Oblon, McClelland, Maier & Neustadt, L.L.P. | 代理人 | Oblon, McClelland, Maier & Neustadt, L.L.P. |
| 主权项 | 1. A treatment method for a thin layer getter material, comprising: forming a protective layer on the thin layer getter material by performing at least one oxidation and/or nitriding step of the thin layer getter material conducted under dry atmosphere of dioxygen and/or dinitrogen, wherein the protective layer is composed of oxide and/or nitride of the thin layer getter material, wherein the protective layer is substantially planar, wherein a thickness of the protective layer is between approximately 1 nm and 10 nm, and wherein the protective layer and the thin layer getter material are disposed in a cavity, the cavity being sealed such that at least a portion of the cavity remains. | ||
| 地址 | Paris FR | ||