Halbleitendes Sperrschichtsystem, insbesondere Transistor oder Kristalldiode mit vakuumdichter Hülle, und Verfahren zu seiner Herstellung,申请号AT19580006625-传众专利搜索

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发明名称	Halbleitendes Sperrschichtsystem, insbesondere Transistor oder Kristalldiode mit vakuumdichter Hülle, und Verfahren zu seiner Herstellung
摘要
申请公布号	AT206943(B)	申请公布日期	1960.01.11
申请号	AT19580006625	申请日期	1958.09.22
申请人	N. V. PHILIPS' GLOEILAMPENFABRIEKEN	发明人
分类号		主分类号
代理机构		代理人
主权项
地址

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