High power single-die semiconductor package

摘要

A semiconductor package includes a single semiconductor die and an electrically and thermally conductive base. The single semiconductor die includes a semiconductor body having opposing first and second surfaces and insulated sides between the first and second surfaces. The single semiconductor die further includes a first electrode at the first surface and a second electrode at the second surface. The single semiconductor die has a defined thickness measured between the first and second surfaces, a defined width measured along one of the insulated sides, and a defined length measured along another one of the insulated sides. The base is attached to the second electrode at the second surface of the single semiconductor die and has the same length and width as the single semiconductor die.

主权项

1. A semiconductor package, comprising:
a single semiconductor die comprising:
a semiconductor body having opposing first and second surfaces, and insulated sides between the first and second surfaces;a first electrode at the first surface; anda second electrode at the second surface,the single semiconductor die having a defined thickness measured between the first and second surfaces, a defined width measured along one of the insulated sides, and a defined length measured along another one of the insulated sides; and an electrically and thermally conductive base attached to the second electrode at the second surface of the single semiconductor die, the base having the same length and width as the single semiconductor die, wherein each side of the base unattached to the single semiconductor die is covered by a protective layer.