Method of manufacturing semiconductor device and method of processing substrate

摘要

A thin film including characteristics of low permittivity, high etching resistance and high leak resistance is to be formed. A method of manufacturing a semiconductor device includes forming a thin film containing a predetermined element on a substrate by performing a cycle a predetermined number of times, the cycle including: forming a first layer containing the predetermined element, nitrogen and carbon by alternately performing supplying a source gas containing the predetermined element and a halogen element to the substrate and supplying a first reactive gas containing three elements including the carbon, the nitrogen and hydrogen and having a composition wherein a number of carbon atoms is greater than that of nitrogen atoms to the substrate a predetermined number of times; and forming a second layer by supplying a second reactive gas different from the source gas and the first reactive gas to the substrate to modify the first layer.

主权项

1. A method of manufacturing a semiconductor device, comprising:
forming a thin film containing a predetermined element on a substrate by performing a cycle a predetermined first number of times under non-plasma atmosphere in a process chamber containing the substrate, the cycle comprising:
forming a first layer containing the predetermined element, nitrogen and carbon by alternately performing a predetermined second number of times:
supplying a source gas containing the predetermined element and a halogen element to the substrates; andsupplying a first reactive gas containing three elements including the carbon, the nitrogen and hydrogen to the substrate, the first reactive gas having a composition wherein a number of carbon atoms is greater than that of nitrogen atoms to the substrate; andforming a second layer subsequent to alternately supplying the source gas and the first reactive gas the second number of times by supplying a second reactive gas different from the source gas and the first reactive gas to the substrate to modify the first layer, wherein the source gas, the first reactive gas and the second reactive gas are substantially excluded from simultaneous occupation of the process chamber and inner pressure of the process chamber when the first reactive gas is supplied therein is set greater than that of the process chamber when the second reactive gas is supplied therein.