Memory cells, semiconductor device structures, memory systems, and methods of fabrication

摘要

Memory cells are disclosed. Magnetic regions within the memory cells include an alternating structure of magnetic sub-regions and coupler sub-regions. The coupler material of the coupler sub-regions antiferromagnetically couples neighboring magnetic sub-regions and effects or encourages a vertical magnetic orientation exhibited by the neighboring magnetic sub-regions. Neighboring magnetic sub-regions, spaced from one another by a coupler sub-region, exhibit oppositely-directed magnetic orientations. The magnetic and coupler sub-regions may each be of a thickness tailored to form the magnetic region in a compact structure. Interference between magnetic dipole fields emitted from the magnetic region on switching of a free region in the memory cell may be reduced or eliminated. Also disclosed are semiconductor device structures, spin torque transfer magnetic random access memory (STT-MRAM) systems, and methods of fabrication.

主权项

1. A memory cell comprising:
a free region and a fixed region each exhibiting a vertical magnetic orientation, at least one of the free region and the fixed region comprising:
magnetic sub-regions, each magnetic sub-region comprising a magnetic material and having a height of less than about four angstroms; andcoupler sub-regions alternating with the magnetic sub-regions and providing anti-parallel coupling of neighboring magnetic sub-regions of the magnetic sub-regions, each coupler sub-region comprising a coupler material and having a height of less than about six angstroms, the free region and the fixed region disposed in a cell core through which a current is flowable to program the memory cell.