Developer for photosensitive resist material and patterning process

摘要

An aqueous solution containing 0.1-20 wt % of a cyclic ammonium hydroxide is a useful developer for photosensitive resist materials. A resist pattern is formed by applying a chemically amplified positive resist composition onto a substrate to form a resist film, exposing the resist film to high-energy radiation, and developing the exposed resist film in a cyclic ammonium hydroxide-containing aqueous solution.

主权项

1. A developer for photosensitive resist materials comprising a cyclic ammonium hydroxide having the general formula (1):wherein R1 and R2 each are a straight, branched or cyclic C1-C6 alkyl group or C2-C10 alkenyl or alkynyl group, and R3 is methylene, ethylene, —O—CH2—, —S—CH2— or —NH—CH2—.