Transistor-based particle detection systems and methods

摘要

Transistor-based particle detection systems and methods may be configured to detect charged and non-charged particles. Such systems may include a supporting structure contacting a gate of a transistor and separating the gate from a dielectric of the transistor, and the transistor may have a near pull-in bias and a sub-threshold region bias to facilitate particle detection. The transistor may be configured to change current flow through the transistor in response to a change in stiffness of the gate caused by securing of a particle to the gate, and the transistor-based particle detection system may configured to detect the non-charged particle at least from the change in current flow.

主权项

1. A transistor comprising a gate and configured to detect at least a non-charged particle secured to the gate,
wherein the transistor further comprises one or more receptor particles on the gate that secure(s) the non-charged particle, wherein the transistor is configured to change current flow through the transistor in response to a change in stiffness of the gate caused by securing of the non-charged particle to the gate, wherein the transistor is configured to detect the non-charged particle at least from the change in current flow, wherein the transistor further comprises a dielectric and a supporting structure contacting the gate and separating the gate from the dielectric, and wherein the transistor is configured to cause the gate to bend away from the dielectric in response to the change in stiffness of the gate caused by the securing of the non-charged particle to the gate.