发明名称 |
Method of manufacturing transparent conductive thin film |
摘要 |
An embodiment of the disclosed technology discloses a transparent conductive thin film and a method of manufacturing the same. The embodiment of the disclosed technology employs tin (II) oxalate (Sn2C2O4) as a raw material, acetic acid and ammonia as complex agents to form a neutral complex system with a pH=6.5˜7.5, and trifluoroacetic acid as dopant to form a stable doping of F ions, and has a high doping efficiency. |
申请公布号 |
US9051640(B2) |
申请公布日期 |
2015.06.09 |
申请号 |
US201213464177 |
申请日期 |
2012.05.04 |
申请人 |
BOE TECHNOLOGY GROUP CO., LTD.;HEFEI BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. |
发明人 |
Liu Tongjun |
分类号 |
B05D5/12;C23C18/12;B05D3/02;H01B1/08 |
主分类号 |
B05D5/12 |
代理机构 |
Ladas & Parry LLP |
代理人 |
Ladas & Parry LLP |
主权项 |
1. A method of manufacturing a transparent conductive thin film, comprising:
adding Sn2C2O4 into an aqueous solution of acetic acid and then performing stirring to form a suspend system; adding ammonia into the suspend system, and then performing stirring to form a clear solution, wherein a pH value of the clear solution is in the range of 6.5 to 7.5; adding trifluoroacetic acid into the clear solution, and then performing stirring to form a sol system containing fluorine ion; and coating the sol system containing fluorine ions on a substrate, and then sequentially performing a dry process and a heat treatment process to form a SnO2:F thin film on the substrate, wherein the treatment temperature of the heat treatment process is 300° C., and the treatment time period of the heat treatment process is 5 min. |
地址 |
Beijing CN |