发明名称 Method of manufacturing transparent conductive thin film
摘要 An embodiment of the disclosed technology discloses a transparent conductive thin film and a method of manufacturing the same. The embodiment of the disclosed technology employs tin (II) oxalate (Sn2C2O4) as a raw material, acetic acid and ammonia as complex agents to form a neutral complex system with a pH=6.5˜7.5, and trifluoroacetic acid as dopant to form a stable doping of F ions, and has a high doping efficiency.
申请公布号 US9051640(B2) 申请公布日期 2015.06.09
申请号 US201213464177 申请日期 2012.05.04
申请人 BOE TECHNOLOGY GROUP CO., LTD.;HEFEI BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. 发明人 Liu Tongjun
分类号 B05D5/12;C23C18/12;B05D3/02;H01B1/08 主分类号 B05D5/12
代理机构 Ladas & Parry LLP 代理人 Ladas & Parry LLP
主权项 1. A method of manufacturing a transparent conductive thin film, comprising: adding Sn2C2O4 into an aqueous solution of acetic acid and then performing stirring to form a suspend system; adding ammonia into the suspend system, and then performing stirring to form a clear solution, wherein a pH value of the clear solution is in the range of 6.5 to 7.5; adding trifluoroacetic acid into the clear solution, and then performing stirring to form a sol system containing fluorine ion; and coating the sol system containing fluorine ions on a substrate, and then sequentially performing a dry process and a heat treatment process to form a SnO2:F thin film on the substrate, wherein the treatment temperature of the heat treatment process is 300° C., and the treatment time period of the heat treatment process is 5 min.
地址 Beijing CN