发明名称 Conversion medium body, optoelectronic semiconductor chip and method of producing an optoelectronic semiconductor chip
摘要 A method of producing an optoelectronic semiconductor chip includes providing a semiconductor layer sequence with at least one active layer, providing a one-piece conversion medium body, wherein a matrix material is incompletely crosslinked and/or cured, and wherein the conversion medium body exhibits at room temperature a hardness of Shore A 0 to Shore A 35 and/or a viscosity of 10 Pa·s to 150 Pa·s, placing the conversion medium body onto the semiconductor layer sequence such that they are in direct contact with one another, and curing the conversion medium body wherein after curing the hardness of the conversion medium body is Shore A 30 to Shore D 80.
申请公布号 US9055655(B2) 申请公布日期 2015.06.09
申请号 US201013377593 申请日期 2010.08.10
申请人 OSRAM Opto Semiconductors GmbH 发明人 Braune Bert
分类号 H01L33/50;H05B33/14;H05B33/10;H01L23/00 主分类号 H01L33/50
代理机构 DLA Piper LLP 代理人 DLA Piper LLP
主权项 1. A method of producing an optoelectronic semiconductor chip comprising: providing a semiconductor layer sequence with at least one active layer, providing a one-piece conversion medium body with a matrix material into which are embedded conversion medium particles, wherein the matrix material is incompletely crosslinked and/or cured, the conversion medium body is placed on a backing film and covered by a covering film, and at least the backing film is at least partially radiation-transmissive in ultraviolet and blue spectral ranges, and the conversation medium body exhibits at 293 K a viscosity of 10 Pa·s to 150 Pa·s, placing the conversion medium body onto the semiconductor layer sequence such that they are in direct contact with one another, and curing the conversion medium body such that after curing hardness of the conversion medium body at 293K is at least Shore A 30 to Shore D 80, wherein, during curing, the backing film remains on the conversion medium body.
地址 DE