发明名称 |
Non-planar transistors and methods of fabrication thereof |
摘要 |
Non-planar transistors and methods of fabrication thereof are described. In an embodiment, a method of forming a non-planar transistor includes forming a channel region on a first portion of a semiconductor fin, the semiconductor fin having a top surface and sidewalls. A gate electrode is formed over the channel region of the semiconductor fin, and an in-situ doped semiconductor layer is grown on the top surface and the sidewalls of the semiconductor fin on opposing sides of the gate electrode using a selective epitaxial growth process. At least a part of the doped semiconductor layer is converted to form a dopant rich region. |
申请公布号 |
US9054194(B2) |
申请公布日期 |
2015.06.09 |
申请号 |
US201012652947 |
申请日期 |
2010.01.06 |
申请人 |
Taiwan Semiconductor Manufactruing Company, Ltd. |
发明人 |
Tung Chih-Hang;Lin Chin-Hsiang;Chang Cheng-Hung;Sun Sey-Ping |
分类号 |
H01L21/336;H01L29/78;H01L29/417;H01L29/66 |
主分类号 |
H01L21/336 |
代理机构 |
Slater & Matsil, L.L.P. |
代理人 |
Slater & Matsil, L.L.P. |
主权项 |
1. A method of forming a non-planar transistor, the method comprising:
forming a channel region on a first portion of a semiconductor fin, the semiconductor fin comprising a top surface and sidewalls; forming a gate electrode over the channel region of the semiconductor fin; forming a semiconductor layer on the top surface and the sidewalls of the semiconductor fin on opposing sides of the gate electrode using a selective epitaxial growth process and having a first doping concentration; growing an in-situ doped semiconductor layer over the semiconductor layer and on the top surface and the sidewalls of the semiconductor fin on opposing sides of the gate electrode using a selective epitaxial growth process and having a second doping concentration greater than the first doping concentration; and converting at least a part of the doped semiconductor layer to form a dopant rich region. |
地址 |
Hsin-Chu TW |