发明名称 Photolithographically defined contacts to carbon nanostructures
摘要 Methods for the fabrication of nanostructures, including nanostructures comprised of carbon nanotubes, and the nanostructures, devices, and assemblies prepared by these methods, are described.
申请公布号 US9053941(B2) 申请公布日期 2015.06.09
申请号 US201013318682 申请日期 2010.05.07
申请人 The Trustees Of The University Of Pennsylvania 发明人 Johnson, Jr. Alan T.;Jones Ryan A.;Khamis Samuel M.
分类号 H01L21/027;H01L21/64;B82Y40/00;H01L51/00;B82Y10/00;B82Y30/00;H01L51/05 主分类号 H01L21/027
代理机构 Baker & Hostetler LLP 代理人 Baker & Hostetler LLP
主权项 1. A method for fabricating a nanostructure comprising: (a) providing a substrate having at least one nanodimensioned device superposed upon it; (b) overlaying at least a portion of the nanodimensioned device with a layer of a passivating material to form a passivating layer which does not substantially interact with the nanodimensioned device by pi-pi overlap or covalent or ionic bonding; and (c) coating at least a portion of the overlaid passivating layer with at least one photoresist; wherein the nanodimensioned device comprises a conducting nanotube or nanowire, a semiconducting nanotube or nanowire, a metallic nanotube or nanowire, a mat of conducting, semiconducting, or metallic nanotubes or nanowires, or combinations thereof; and wherein the passivating material is a photosensitive aliphatic organic polymer or copolymer or comprises an aliphatic organic polymer or copolymer precursor or a saturated wax or aliphatic surfactant, said passivating material being susceptible to imaging and photoprocessing.
地址 Philadelphia PA US
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