发明名称 |
Photolithographically defined contacts to carbon nanostructures |
摘要 |
Methods for the fabrication of nanostructures, including nanostructures comprised of carbon nanotubes, and the nanostructures, devices, and assemblies prepared by these methods, are described. |
申请公布号 |
US9053941(B2) |
申请公布日期 |
2015.06.09 |
申请号 |
US201013318682 |
申请日期 |
2010.05.07 |
申请人 |
The Trustees Of The University Of Pennsylvania |
发明人 |
Johnson, Jr. Alan T.;Jones Ryan A.;Khamis Samuel M. |
分类号 |
H01L21/027;H01L21/64;B82Y40/00;H01L51/00;B82Y10/00;B82Y30/00;H01L51/05 |
主分类号 |
H01L21/027 |
代理机构 |
Baker & Hostetler LLP |
代理人 |
Baker & Hostetler LLP |
主权项 |
1. A method for fabricating a nanostructure comprising:
(a) providing a substrate having at least one nanodimensioned device superposed upon it; (b) overlaying at least a portion of the nanodimensioned device with a layer of a passivating material to form a passivating layer which does not substantially interact with the nanodimensioned device by pi-pi overlap or covalent or ionic bonding; and (c) coating at least a portion of the overlaid passivating layer with at least one photoresist; wherein the nanodimensioned device comprises a conducting nanotube or nanowire, a semiconducting nanotube or nanowire, a metallic nanotube or nanowire, a mat of conducting, semiconducting, or metallic nanotubes or nanowires, or combinations thereof; and wherein the passivating material is a photosensitive aliphatic organic polymer or copolymer or comprises an aliphatic organic polymer or copolymer precursor or a saturated wax or aliphatic surfactant, said passivating material being susceptible to imaging and photoprocessing. |
地址 |
Philadelphia PA US |