SEMICONDUCTOR DEVICES HAVING THROUGH ELECTRODES AND METHODS FOR FABRICATING THE SAME

摘要

The present invention relates to a semiconductor device including a through electrode and a manufacturing method thereof. An intermetallic insulation layer with carbon is formed on a substrate. A via hole which vertically passes through the intermetallic insulation layer and the substrate is formed. The carbon is supplemented on the surface of the intermetallic insulation layer exposed through the via hole. A via insulation layer to cover the inner wall of the via hole is formed. A through electrode surrounded by the via insulation layer is formed in the via hole.