| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing the occurrence of defects at a PN junction portion of an IGBT region side and the degradation of ohmic characteristics of a diode region side, and to provide a method of manufacturing the same. ! SOLUTION: A semiconductor device includes: a semiconductor substrate having a first surface and a second surface; a first-conductivity-type first semiconductor region provided on the first surface side; a second-conductivity-type second semiconductor region formed on the first surface side and provided in a part of the first semiconductor region; a first-conductivity-type third semiconductor region provided on the first surface and having a lower first-conductivity-type impurity concentration than that of the first semiconductor region; a first-conductivity-type first semiconductor layer provided on the second surface side; a second-conductivity-type second semiconductor layer provided between the first semiconductor region and the thir |
