| 摘要 |
A thin film transistor display panel according an embodiment of the present invention comprises: an insulation substrate; a gate line disposed on the insulation substrate and provided with a gate electrode; a reference electrode line disposed on the insulation substrate, separated from the gate line, and provided with an extension unit; a first gate insulation film disposed on the insulation substrate, the gate line, and the reference electrode line; a semiconductor layer disposed on the first gate insulation film and overlapped with the gate electrode; a second gate insulation film disposed on the semiconductor layer and the first gate insulation film and provided with a semiconductor opening part to expose the semiconductor layer; a drain electrode disposed on the second gate insulation film and the semiconductor layer to face a data line including a source electrode and the source electrode; a first protective film disposed on the data line, the drain electrode, and the second gate insulation film; a second protective film disposed on the first protective film; a first electric field generation electrode disposed on the second protective film; a third protective film disposed on the first electric field generation electrode; a first contact hole disposed on the first protective film, the second protective film, and the third protective film to expose a portion of the drain electrode; and a second electric field generation electrode disposed on the third protective film and connected to the drain electrode through the first contact hole. The semiconductor layer is disposed on an oxide semiconductor layer and the oxide semiconductor layer, and comprises a first auxiliary layer and a second auxiliary layer separated from each other. The edges of the drain electrode are disposed inside the edges of the first auxiliary layer, and the edges of the source electrode are disposed inside the edges of the second auxiliary layer. |
