发明名称 |
SUBSTRATE TREATMENT APPARATUS, SUBSTRATE TREATMENT METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a substrate treatment apparatus capable of suppressing generation of a by-product, and improving in-plane uniformity of a substrate, and to provide a substrate treatment method and a manufacturing method of a semiconductor device.SOLUTION: A substrate treatment apparatus has: a treatment chamber for treating a substrate; a gas supply part including a gas supply port for supplying treatment gas for treating the substrate to a center part of the substrate and a peripheral part of the substrate respectively independently in the treatment chamber; an exhaust part for exhausting the inside of the treatment chamber; and a control part for controlling the gas supply part so that the treatment gas supplied from the gas supply part is supplied to the peripheral part of the substrate, and then supplied to the center part of the substrate. |
申请公布号 |
JP2015105405(A) |
申请公布日期 |
2015.06.08 |
申请号 |
JP20130247716 |
申请日期 |
2013.11.29 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC |
发明人 |
YAMAGUCHI TENWA;NISHIDO SHUHEI |
分类号 |
C23C16/34;C23C16/455;H01L21/31;H01L21/316 |
主分类号 |
C23C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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