| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for coating an electrostatic chuck and a plasma processing apparatus enabling the temperature of a wafer to be properly controlled.SOLUTION: The method for coating an electrostatic chuck is provided that includes a step in which, before a substrate is subjected to plasma processing, gas containing C and F is supplied while the substrate is not mounted on the electrostatic chuck, plasma is generated from the supplied gas, and a part or the whole of the electrostatic chuck is coated in such a way that a film formed on the center side of the electrostatic chuck by the generated plasma is formed to be thicker than that formed on the edge side of the electrostatic chuck. |
