| 摘要 |
In the present invention, disclosed are a novel compound semiconductor used as a thermoelectric material or the like and a use of the same. The compound semiconductor according to the present invention may be represented by Chemical Formula 1. <Chemical Formula 1> [Bi_1-xM_xCu_(u-w)T_wO_(a-y)Q1_yTe_bSe_z]A_c In Chemical Formula 1, M is any one selected from the group consisting of Ba, Sr, Ca, Mg, Cs, K, Na, Cd, Hg, Sn, Pb, Mn, Ga, In, Tl, As, and Sb, or two or more elements thereof. Q1 is any one selected from the group consisting of S, Se, As, and Sb, or two or more elements thereof. T is any one selected from transition metal elements, or two or more elements. A is any one selected from the group consisting of transition metal elements and a compound of transition metal elements and Group 6 elements, or two or more thereof. 0<=x<1, 0.5<=u<=1.5, 0<w<=1, 0.2<a<1.5, 0<=y<1.5, 0<=b<1.5, 0<=z<1.5, and 0<c<0.2. |
