| 摘要 |
The present invention relates to a power semiconductor module. A power semiconductor module according to an embodiment of the present invention includes a module housing which has a storage space and a fixing part formed on the edge of the storage space, a substrate which is formed in the housing, is exposed to the storage space, and has a circuit pattern for arranging power elements, and a terminal which is combined with the fixing part, has an input terminal for receiving power, and a lead which is boned to the circuit pattern between power elements and distributes a supplied current. Therefore, an increase in a surge voltage can be effectively prevented by balancing current distribution between the power elements to effectively reduce drift inductance. |
