| 摘要 |
<p>Suggested is a light emitting diode with an extended reflection layer capable of improving light efficiency by forming the reflection layer on the whole surface of the diode without discontinuity. The diode includes a light emitting structure which includes a first semiconductor layer, an active layer and a second semiconductor layer, a second reflection layer which is located on the first semiconductor layer, and a first reflection layer which is located on the second semiconductor layer. The whole surface of the light emitting structure is covered without the discontinuity by the combination of the first reflection layer and the second reflection layer.</p> |
