<p>Disclosed is a light emitting diode having a dielectric layer capable of extending the luminescence distribution of light emitted from a light exiting surface and improving optical power. The diode includes a complex dielectric layer formed by combining a first dielectric layer where long wavelength dielectric layer/high transmissivity dielectric layer are repeatedly stacked with a second dielectric layer where short wavelength dielectric layer/high transmissivity dielectric layer are repeatedly stacked. A desired complex dielectric layer is formed by combining a first dielectric layer where TiO2 layer/SiO2 layer are repeatedly stacked with a second dielectric layer where Ta2O5/SiO2 are repeatedly stacked.</p>
申请公布号
KR20150062352(A)
申请公布日期
2015.06.08
申请号
KR20130146908
申请日期
2013.11.29
申请人
ILJIN-LED CO., LTD.
发明人
KIM, DOO SUNG;KIM, SEUNG YONG;SONG, JUNG SUB;KIM, KEUK;JU, JEONG IL