METHODS OF FABRICATING SEMICONDUCTOR DEVICES HAVING DOUBLE-LAYERED BLOCKING INSULATING LAYERS

摘要

Described is a method of fabricating a semiconductor memory device. It includes stacking alternately interlayer dielectrics and sacrificial layers on a substrate, forming a channel hole which penetrates the sacrificial layers and exposes the substrate, and forming a blocking insulating layer, a charge storage layer, a channel layer on the sidewall of the channel hole and the substrate exposed in the channel hole. The blocking insulating layer includes a first blocking insulating layer and a second blocking insulating layer. To expose the first blocking insulating layer, the sacrificial layers are selectively removed to form a gap. The first blocking insulating layer exposed in the gap is removed so that first blocking insulating layer patterns are formed between the interlayer dielectrics and the second blocking insulating layer. A gate electrode is formed in the gap.