| 摘要 |
The method involves forming elementary structures of LED (150) on a surface of a substrate (100), in form of small islands. An n-type layer (132), an active layer (133), a p-type layer (134) and the structures are spaced apart from each other on the substrate by trenches (160). Side dimensions of the p-type layer, the active layer and a portion (1320) of the n-type layer are reduced. An insulating material portion (1390) is formed on sides of the p-type layer, the active layer and the portion of the n-type layer. Contact studs are exposed over another portion (1321) of the n-type layer. An independent claim is also included for a LED structure. |
