| 摘要 |
Disclosed is a high voltage device with an improved breakdown property. The high voltage device includes: a substrate structure which includes a high voltage transistor structure arranged on the lower side thereof, and a lower wire connected to the high voltage transistor structure; a linker structure which includes a supplementary insulation layer pattern arranged on the substrate structure, and an interconnecting linker connected to the lower wire via a supplementary insulation film pattern; an interlayer insulation layer pattern which is arranged on the linker structure; and an upper wire structure which is connected to the interconnecting linker via the interlayer insulation layer pattern. An insulation property is improved by increasing the thickness of an inter-metal dielectric film between an upper wire and the lower wire. The breakdown property and a leakage current property are improved. |
