METHOD FOR MANUFACTURING SEMI-POLAR GAN TEMPLATE

摘要

Disclosed is a method for manufacturing a semi-polar GaN template. The method for manufacturing a semi-polar GaN template according to the present invention includes: a step of forming a sapphire surface with r cleavage planes by In-Situ on an m surface of a sapphire substrate in a hydride vapor phase epitaxy (HVPE) reactor and an AIN layer thereon; a step of forming a GaN seed layer on the AIN layer; a step of forming a low temperature (11-22) GaN stress-relaxation layer on the GaN seed layer; a step of forming a (11-22) GaN rising temperature growth layer on the (11-22) GaN stress-relaxation layer; and a step of forming a (11-22) GaN two dimensional growth layer on the (11-22) GaN rising temperature growth layer.