OPTICAL DEVICE BASED ON BISMUTH-CONTAINING III-V COMPOUND MULTILAYER SEMICONDUCTORS

摘要

Optical devices based on bismuth-containing III-V compound semiconductor materials are disclosed. The optical device includes an optically active pseudomorphic superlattice formed on a substrate. The superlattice includes alternating InAsSby layers (where y is greater than or equal to zero) and InAsBi layers.

主权项

1. An optical device, comprising
a substrate; and an optically active pseudomorphic superlattice formed on the substrate, the superlattice comprising alternating InAsBi layers with InAs or InAsSb layers.