MULTILAYER STRUCTURE, DEVICE USING THE SAME, METHOD FOR PRODUCING THE MULTILAYER STRUCTURE, AND METHOD FOR PRODUCING THE DEVICE

摘要

Provided are a novel multilayer structure that can be used to protect a device and a device using the multilayer structure. The disclosed multilayer structure is a multilayer structure including a substrate and a barrier layer stacked on the substrate. The 3% strain tension of the substrate in at least one direction is at least 2000 N/m. The barrier layer contains a reaction product (R). The reaction product (R) is a reaction product formed by a reaction at least between a metal oxide (A) and a phosphorus compound (B). In an infrared absorption spectrum of the barrier layer in a range of 800 to 1400 cm−1, a wavenumber (n1) at which maximum infrared absorption occurs is in a range of 1080 to 1130 cm−1. A metal atom constituting the metal oxide (A) is essentially an aluminum atom.

主权项

1. A multilayer structure comprising:
a substrate; a barrier layer stacked on the substrate, and a deposited inorganic layer; wherein: a 3% strain tension of the substrate in at least one direction is at least 2000 N/m, the barrier layer comprises a reaction product (R), the reaction product (R) is a reaction product formed by a reaction at least between a metal oxide (A) and a phosphorus compound (B), in an infrared absorption spectrum of the barrier layer in a range of 800 to 1400 cm−1, a wavenumber (n1) at which maximum infrared absorption occurs is in a range of 1080 to 1130 cm−1, and a metal atom constituting the metal oxide (A) is essentially an aluminum atom.