| 发明名称 |
MANUFACTURING METHOD OF POLYSILICON LAYER, AND POLYSILICON THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF |
| 摘要 |
A manufacturing method of a polysilicon layer and a manufacturing method of a polysilicon thin film transistor. The manufacturing method of the polysilicon layer includes: providing a substrate; forming a barrier layer and a buffer layer on the substrate; disposing a plurality of grooves in the buffer layer by a patterning process, and forming crystal seeds on the buffer layer; forming an amorphous silicon layer on the buffer layer provided with the grooves and on the crystal seeds; transferring the amorphous silicon layer into a polysilicon layer using a thermal treatment process. |
| 申请公布号 |
US2015155390(A1) |
申请公布日期 |
2015.06.04 |
| 申请号 |
US201314348699 |
申请日期 |
2013.11.11 |
| 申请人 |
ORDOS YUANSHENG OPTOELECTRONICS CO., LTD. ;BOE TECHNOLOGY GROUP CO., LTD. |
发明人 |
Wang Zuqiang |
| 分类号 |
H01L29/786;H01L29/16;H01L29/66;H01L21/306;H01L21/308;H01L29/04;H01L21/02 |
主分类号 |
H01L29/786 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A manufacturing method of a polysilicon layer, comprising:
providing a substrate; forming a buffer layer on the substrate; disposing a plurality of grooves in the buffer layer by a patterning process, and forming crystal seeds on the buffer layer; forming an amorphous silicon layer on the buffer layer provided with the grooves and on the crystal seeds; transferring the amorphous silicon layer into a polysilicon layer using a thermal treatment process, |
| 地址 |
Ordos, Inner Mongolia CN |
