| 摘要 |
A semiconductor memory device includes a first bank, a second bank disposed separately from the first bank along a first direction, a third bank disposed separately from the first bank along a second direction substantially perpendicular to the first direction, a fourth bank disposed separately from the second bank along the second direction and from the third bank along the first direction, a first row control region, which is disposed between the first bank and the second bank, suitable for controlling a row decoding operation of the first bank and the second bank, a second row control region, which is disposed between the third bank and the fourth bank, suitable for controlling a row decoding operation of the third bank and the fourth bank, and a refresh control unit suitable for controlling a refresh operation of the first to fourth banks. |
| 主权项 |
1. A semiconductor memory device, comprising:
a first bank; a second bank disposed separately from the first bank along a first direction; a third bank disposed separately from the first bank along a second direction substantially perpendicular to the first direction; a fourth bank disposed separately from the second bank along the second direction and from the third bank along the first direction; a first row control region, which is disposed between the first bank and the second bank, suitable for controlling a row decoding operation of the first bank and the second bank; a second row control region, which is disposed between the third bank and the fourth bank, suitable for controlling a row decoding operation of the third bank and the fourth bank; and a refresh control unit suitable for controlling a refresh operation of the first to fourth banks. |
