NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

According to an embodiment, a nonvolatile memory device includes a first wiring extending to a first direction, a second wiring disposed on the first wiring in a second direction which is orthogonal to the first direction, a first insulating film provided between the first wiring and the second wiring, a bit line extending in the second direction, and a variable resistance film contacting an end portion of the first wiring, an end portion of the second wiring, and an end portion of the first insulating film. A dielectric constant of a center portion between the first and second wirings in the second direction is higher than at vicinities of the first and the second wirings. The variable resistance film is disposed between the bit line and the first wiring, between the bit line and the second wiring, and between the bit line and the first insulating film.

主权项

1. A nonvolatile memory device, comprising:
a first wiring extending in a first direction; a second wiring disposed on the first wiring in a second direction which is orthogonal to the first direction; a first insulating film provided between the first wiring and the second wiring; a bit line extending in the second direction; and a variable resistance film contacting an end portion of the first wiring, an end portion of the second wiring, and an end portion of the first insulating film, the variable resistance film being disposed between the bit line and the first wiring, between the bit line and the second wiring, and between the bit line and the first insulating film, a dielectric constant of a center portion between the first wiring and the second wiring in the second direction being higher than at a vicinity of the first wiring and a vicinity of the second wiring.