| 发明名称 |
SOLID-STATE IMAGING ELEMENT, MANUFACTURING METHOD, AND ELECTRONIC DEVICE |
| 摘要 |
A solid-state imaging element includes a semiconductor substrate where a plurality of photodiodes are arranged in a plane, and a separation section which separates the photodiodes, in which the separation section has a photoelectric conversion section formed by filling a material which has a high light absorption coefficient and a high quantum efficiency in trenches which are formed in the semiconductor substrate. |
| 申请公布号 |
US2015155327(A1) |
申请公布日期 |
2015.06.04 |
| 申请号 |
US201414550625 |
申请日期 |
2014.11.21 |
| 申请人 |
Sony Corporation |
发明人 |
Kuboi Nobuyuki |
| 分类号 |
H01L27/146;H01L31/032;H01L31/0304;H04N9/04;H04N5/359 |
主分类号 |
H01L27/146 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A solid-state imaging element comprising:
a semiconductor substrate where a plurality of photodiodes are arranged in a plane; and a separation section which separates the photodiodes, wherein the separation section has a photoelectric conversion section formed by filling a material which has a high light absorption coefficient and a high quantum efficiency in trenches which are formed in the semiconductor substrate. |
| 地址 |
Tokyo JP |
