发明名称 |
THROUGH ELECTRODE SUBSTRATE AND SEMICONDUCTOR DEVICE USING THROUGH ELECTRODE SUBSTRATE |
摘要 |
PROBLEM TO BE SOLVED: To provide a through electrode substrate that eliminates a problem due to gas accumulated in a gas reservoir in a through hole and can prevent a filler in the through hole from falling off.SOLUTION: A through electrode substrate of the present invention includes: a substrate having a through hole that penetrates a first opening on a first surface and a second opening on a second surface; and a filler arranged in the through hole. The second opening is larger than the first opening, and a minimum opening part having the smallest area in a plain view exists between the first opening and second opening. The through electrode substrate also includes a gas emission part that is arranged so as to contact a filler being exposed to either the first surface or the second surface. |
申请公布号 |
JP2015103586(A) |
申请公布日期 |
2015.06.04 |
申请号 |
JP20130241392 |
申请日期 |
2013.11.21 |
申请人 |
DAINIPPON PRINTING CO LTD |
发明人 |
KURAMOCHI SATORU;KOIWA YUKIO;YOSHIOKA HIDENORI |
分类号 |
H01L23/32 |
主分类号 |
H01L23/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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