发明名称 THROUGH ELECTRODE SUBSTRATE AND SEMICONDUCTOR DEVICE USING THROUGH ELECTRODE SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a through electrode substrate that eliminates a problem due to gas accumulated in a gas reservoir in a through hole and can prevent a filler in the through hole from falling off.SOLUTION: A through electrode substrate of the present invention includes: a substrate having a through hole that penetrates a first opening on a first surface and a second opening on a second surface; and a filler arranged in the through hole. The second opening is larger than the first opening, and a minimum opening part having the smallest area in a plain view exists between the first opening and second opening. The through electrode substrate also includes a gas emission part that is arranged so as to contact a filler being exposed to either the first surface or the second surface.
申请公布号 JP2015103586(A) 申请公布日期 2015.06.04
申请号 JP20130241392 申请日期 2013.11.21
申请人 DAINIPPON PRINTING CO LTD 发明人 KURAMOCHI SATORU;KOIWA YUKIO;YOSHIOKA HIDENORI
分类号 H01L23/32 主分类号 H01L23/32
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