| 摘要 |
PROBLEM TO BE SOLVED: To provide a compact, high-performance, and highly reliable gas sensor. ! SOLUTION: A semiconductor gas sensor of a diode type or a field effect transistor type includes a metal oxide layer laminated on a semiconductor material as a gas sensing section. The semiconductor material is a group III nitride semiconductor. The group III nitride semiconductor includes an AlGaN/GaN lamination structure. A metal oxide includes any one of SnO2, ZnO, and ZrO2, or their composite material, as a main component. ! COPYRIGHT: (C)2015,JPO&INPIT |
