发明名称 SEMICONDUCTOR PACKAGE AND FABRICATION METHOD THEREOF
摘要 A semiconductor package is provided, which includes: a first dielectric layer having opposite first and second surfaces and a cavity penetrating the first and second surfaces; a first circuit layer embedded in the first dielectric layer and exposed from the first surface of the first dielectric layer; at least an adhesive member formed in the cavity and adjacent to the first surface of the first dielectric layer; an electronic element disposed on the adhesive member; a second dielectric layer formed on the second surface of the first dielectric layer and in the cavity to encapsulate the adhesive member and the electronic element; a second circuit layer formed on the second dielectric layer; and a plurality of conductive vias formed in the second dielectric layer for electrically connecting the second circuit layer and the electronic element, thereby reducing the package size and cost and increasing the wiring space and flexibility.
申请公布号 US2015155250(A1) 申请公布日期 2015.06.04
申请号 US201314143700 申请日期 2013.12.30
申请人 Siliconware Precision Industries Co., Ltd 发明人 Chen Tzu-Chieh;Chiu Shih-Chao;Chen Chia-Cheng
分类号 H01L23/00;H01L23/522;H01L21/768 主分类号 H01L23/00
代理机构 代理人
主权项 1. A method for fabricating a semiconductor package, comprising the steps of: forming a first circuit layer on a carrier; forming a first dielectric layer on the carrier for encapsulating the first circuit layer, wherein the first dielectric layer has a first surface adjacent to the carrier and a second surface opposite to the first surface; forming in the first dielectric layer a cavity penetrating the first and second surfaces of the first dielectric layer; forming at least an adhesive member in the cavity of the first dielectric layer; disposing an electronic element on the adhesive member; forming a second dielectric layer on the first dielectric layer and in the cavity to encapsulate the electronic element and the adhesive member; forming a second circuit layer on the second dielectric layer and forming a plurality of conductive vias in the second dielectric layer for electrically connecting the second circuit layer and the electronic element; and removing the carrier.
地址 Taichung TW