发明名称 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To provide a semiconductor device which is unlikely to cause mechanical and electrical damages even when being subjected to a heat treatment such as reflow, and achieves easy positioning in packaging; and provide a manufacturing method of the semiconductor device.SOLUTION: A semiconductor device 100 comprises: a semiconductor chip 101; an insulation layer 104 provided on a principal surface 101a of the semiconductor chip 101; a wiring layer; an overcoat layer 106; a wiring pattern 105A including a connection pad provided in the wiring layer, for achieving connection with an external circuit; a base pattern 105M provided in the wiring layer; an opening 106-1 as a first opening formed at a position on the overcoat layer 106, which overlaps the connection pad and an opening 106-2 as a second opening formed at a position on the overcoat layer 106, which overlaps the base pattern 105M; a solder bump 107A as a solder terminal formed by filling the opening 106-1; and a solder part 108 for alignment formed by filling the opening 106-2.</p>
申请公布号 JP2015103593(A) 申请公布日期 2015.06.04
申请号 JP20130241617 申请日期 2013.11.22
申请人 SEIKO EPSON CORP 发明人 NAKAYAMA HIROHISA
分类号 H01L21/60;H01L23/12 主分类号 H01L21/60
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