发明名称 LASER MODULE FOR HOMOGENEOUS LINE-SHAPED INTENSITY PROFILES
摘要 The present invention relates to a laser module comprising several sub-modules (1) arranged side by side along a first axis (10) on a common carrier. Each of said sub-modules (1) comprises a laser area (8) formed of one or several arrays of semiconductor lasers arranged on a surface of the sub-module (1). Laser radiation emitted by each of said semiconductor lasers (2) forms an intensity distribution in a working plane facing said surface of the sub-modules (1). The sub-modules (1) and laser areas (8) are designed and arranged such that the laser areas (8) of adjacent sub-modules (1) partly overlap in a direction perpendicular to said first axis (10). With such a laser module a thin laser line focus can be generated having a homogeneous intensity distribution along the length of the laser line independent on the distance between the module and the working plane. The individual semiconductor lasers (2) may be VCSEL with a rectangularly shaped emission.
申请公布号 US2015155685(A1) 申请公布日期 2015.06.04
申请号 US201314408521 申请日期 2013.06.26
申请人 KONINKLIJKE PHILIPS N.V. 发明人 Groenenborn Stephan;Pollmann-Retsch Jens
分类号 H01S5/026;H01S5/42 主分类号 H01S5/026
代理机构 代理人
主权项 1. A laser module comprising several sub-modules arranged along a first axis side by side on a common carrier, each of said sub-modules comprising a laser area formed of one or several arrays of semiconductor lasers on a surface of the sub-modules and laser radiation emitted by said semiconductor lasers forming an intensity distribution in a working plane facing said surface of the sub-modules, wherein said sub-modules and laser areas are designed and arranged such that projections of the laser areas of adjacent sub-modules partly overlap in a direction perpendicular to said first axis, wherein said laser areas are formed of an arrangement of said arrays of semiconductor lasers, which comprises two parallel side edges, said parallel side edges of adjacent laser areas being parallel to one another and tilted by an angle β to said first axis, wherein 0°<β<90°, wherein said laser areas are arranged to generate a homogeneous intensity distribution in the working plan in a direction parallel to the first axis by means of the tilted arrangement of the laser areas.
地址 EINDHOVEN NL