Resistive-Switching Memory Elements Having Improved Switching Characteristics

摘要

Resistive-switching memory elements having improved switching characteristics are described, including a memory element having a first electrode and a second electrode, a switching layer between the first electrode and the second electrode comprising hafnium oxide and having a first thickness, and a coupling layer between the switching layer and the second electrode, the coupling layer comprising a material including metal titanium and having a second thickness that is less than 25 percent of the first thickness.

主权项

1. A semiconductor device comprising:
a first layer operable as a first electrode; a second layer operable as a second electrode; a third layer disposed between the first layer and the second layer,
wherein the third layer is operable to switch between a first resistive state and a second resistive state different from the first resistive state;wherein the third layer comprises a first portion and a second portion,wherein the first portion comprises an oxygen deficient metal oxide,wherein the second portion comprises a metal oxide,wherein an oxygen concentration in the second portion is greater than an oxygen concentration in the first portion; and a fourth layer disposed between the second layer and the third layer, the fourth layer comprising titanium.